IRFL014TRPBF, Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

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2500 шт., срок 10-12 недель

1.80 BYN

Кратность заказа 2500 шт.

2500 шт. на сумму 4 500 BYN

Альтернативные предложения3

Номенклатурный номер: 8003192821

Артикул: IRFL014TRPBF

Страна происхождения: КИТАЙ

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор: N-MOSFET, полевой, 60В, 1,7А, 3,1Вт, SOT223 Характеристики

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	19 ns
Id - Continuous Drain Current:	2.7 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-223-4
Part # Aliases:	IRFL014TRPBF-BE3
Pd - Power Dissipation:	3.1 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	11 nC
Rds On - Drain-Source Resistance:	200 mOhms
Rise Time:	50 ns
Series:	IRFL
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	2.7 A
Maximum Drain Source Resistance	200 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3.1 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	11 nC @ 10 V
Width	3.7mm
Вес, г	192.2

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