IRFB3307PBF, Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube

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37550 шт., срок 10-12 недель

11.50 BYN

Мин. кол-во для заказа 110 шт.

от 219 шт. — 11 BYN

от 619 шт. — 9.90 BYN

110 шт. на сумму 1 265 BYN

Альтернативные предложения3

Номенклатурный номер: 8003192023

Артикул: IRFB3307PBF

Страна происхождения: КИТАЙ

Semiconductor - Discrete > Transistors > FET - MOSFET

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
HTS	COMPONENTS
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	120
Maximum Drain Source Resistance (mOhm)	6.3@10V
Maximum Drain Source Voltage (V)	75
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	200000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Package Height	9.02(Max)
Package Length	10.67(Max)
Package Width	4.83(Max)
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	HEXFET
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	63
Typical Gate Charge @ 10V (nC)	120
Typical Gate Charge @ Vgs (nC)	120@10V
Typical Input Capacitance @ Vds (pF)	5150@50V
Typical Rise Time (ns)	120
Typical Turn-Off Delay Time (ns)	51
Typical Turn-On Delay Time (ns)	26
Вес, г	177.2

6 месяцев

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